(A) Zener diode is designed to operate in the reverse breakdown region. To achieve this, the $p-n$ junction is heavily doped on both sides. Due to thi

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heavily doping both $p$- and $n$-sides of a $p-n$ junction diode

(A) Zener diode is designed to operate in the reverse breakdown region. To achieve this, the $p-n$ junction is heavily doped on both sides. Due to this heavy doping, the depletion region becomes extremely thin (less than $10^{-6} \,m$). This thin depletion layer results in a very high electric field across the junction even for a small reverse bias voltage, which facilitates Zener breakdown.

Class 12 Physics Semiconductor Electronics Zener Diode

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$A$ Zener diode is made by

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A
heavily doping both $p$- and $n$-sides of a $p-n$ junction diode
B
heavily doping the $p$-side and lightly doping the $n$-side of a $p-n$ junction diode
C
lightly doping the $p$-side and heavily doping the $n$-side of a $p-n$ junction diode
D
lightly doping both $p$- and $n$-sides of a $p-n$ junction diode