$A$ $P-N$ junction is a ............ .

For diode $D_1$,the forward bias resistance is $20 \ \Omega$ and the reverse bias resistance is $600 \ \Omega$. For diode $D_2$,the forward bias resistance is $30 \ \Omega$ and the reverse bias resistance is $200 \ \Omega$. Find the equivalent resistance between $A$ and $B$ if $(i)$ $A$ is at a higher potential,and $(ii)$ $B$ is at a higher potential.

In the middle of the depletion layer of a reverse-biased $PN$ junction,the

In the circuit shown for the given input voltage $V_i$, the maximum output voltage $V_0$ is

If a diode having infinite reverse bias resistance is connected in a circuit as shown in the figure,then $I_1$ and $I_2$ are respectively:

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :