The band diagrams for three different semicon | vedclass

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(A) In the first diagram (left),the donor energy level $E_D$ is located just below the conduction band $C$. This is characteristic of an $n$-type semi

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$n$-type semiconductor,intrinsic semiconductor,$p$-type semiconductor

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(A) In the first diagram (left),the donor energy level $E_D$ is located just below the conduction band $C$. This is characteristic of an $n$-type semiconductor.In the second diagram (middle),the Fermi level $E_F$ is located exactly in the middle of the forbidden energy gap between the valence band $V$ and the conduction band $C$. This is characteristic of an intrinsic semiconductor.In the third diagram (right),the acceptor energy level $E_A$ is located just above the valence band $V$. This is characteristic of a $p$-type semiconductor.Therefore,the sequence from left to right is: $n$-type semiconductor,intrinsic semiconductor,$p$-type semiconductor.

The band diagrams for three different semiconductors are shown in the figure below. Starting from the left to the right,identify the types of semiconductors they represent.

Similar Questions

Carbon,Silicon,and Germanium have four valence electrons each. These are characterized by valence and conduction bands separated by energy band gaps respectively equal to $(E_g)_C, (E_g)_{Si},$ and $(E_g)_{Ge}$. Which of the following statements is true?

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