What is the cause of the formation of the dep | vedclass

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(B) When a $P-N$ junction is formed,the difference in concentration of charge carriers between the $P$ and $N$ regions leads to the diffusion of elect

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Due to the diffusion of charge carriers

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(B) When a $P-N$ junction is formed,the difference in concentration of charge carriers between the $P$ and $N$ regions leads to the diffusion of electrons from the $N$-side to the $P$-side and holes from the $P$-side to the $N$-side.As these charge carriers cross the junction,they recombine near the interface.This recombination leaves behind immobile ionized impurity atoms (negative ions on the $P$-side and positive ions on the $N$-side).These immobile ions create an electric field that opposes further diffusion,resulting in a region depleted of mobile charge carriers,known as the depletion layer.Therefore,the depletion region is primarily caused by the diffusion of charge carriers.

What is the cause of the formation of the depletion layer in a $P-N$ junction?

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