$A$ silicon sample is made into a $p$-type semiconductor by doping. Indium atoms are added at a rate of one atom per $5 \times 10^7$ silicon atoms. If the number density of silicon is $5 \times 10^{28} \text{ atoms/m}^3$,calculate the number density of acceptor atoms per $\text{cm}^3$.
- A$5 \times 10^{15} \text{ atoms/cm}^3$
- B$10^{18} \text{ atoms/cm}^3$
- C$10^{15} \text{ atoms/cm}^3$
- D$5 \times 10^{17} \text{ atoms/cm}^3$
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Let ${n_h}$ and ${n_e}$ be the number of holes and conduction electrons respectively in a semiconductor. Then
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View SolutionIn a semiconductor,the number density of intrinsic charge carriers at $27^{\circ} \text{C}$ is $1.5 \times 10^{16} \, \text{m}^{-3}$. If the semiconductor is doped with impurity atoms,the hole density increases to $4.5 \times 10^{22} \, \text{m}^{-3}$. The electron density in the doped semiconductor is $..... \times 10^{9} \, \text{m}^{-3}$.
Doping of a semiconductor (with small impurity atoms) generally changes the resistivity as follows.
In a semiconductor,the intrinsic carrier concentration of electrons and holes is $6 \times 10^8 \ m^{-3}$. After doping with some impurity,the electron concentration increases to $9 \times 10^{12} \ m^{-3}$. Find the new hole concentration.
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View SolutionThe majority charge carriers in $p$-type and $n$-type semiconductors are respectively:
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