$PN-$junction diode works as an insulator if connected:

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

Find the current flowing through the ideal diode in the given circuit. (in $A$)

When no bias is applied to a $P-N$ junction,the current is:

When the $P$ end of a $P-N$ junction is connected to the negative terminal of the battery and the $N$ end to the positive terminal of the battery,then the $P-N$ junction behaves like:

The $I-V$ characteristic of a $p-n$ junction diode is shown in the figure. Find the approximate dynamic resistance of the $p-n$ junction when a forward bias of $1 \text{ V}$ is applied. (in $\Omega$)