$A$ realistic graph depicting the variation of the reciprocal of input resistance $(1/r_i)$ in an input characteristics measurement in a common emitter transistor configuration is:

The $i-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2 \; V$ is applied is ....... $\Omega$.

If the forward voltage in a diode is increased,the width of the depletion region $\qquad$ .

In the figure,two $P-N$ junctions are connected. In which of the following connections will the voltages across the $P-N$ junctions be equal?

The circuit shown in the following figure contains two diodes $D_1$ and $D_2$,each with a forward resistance of $50 \, \Omega$ and infinite backward resistance. If the battery voltage is $6 \, V$,the current through the $100 \, \Omega$ resistance (in amperes) is:

In the middle of the depletion layer of a reverse-biased $PN$ junction,the