Consider a situation in which reverse biased current of a particular $P-N$ junction increases when it is exposed to light of wavelength $\lambda \le 621 \, nm$. During this process,enhancement in carrier concentration takes place due to the generation of hole-electron pairs. The value of the band gap is nearly (in $eV$):
- A$1$
- B$4$
- C$2$
- D$0.5$
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$LED$ is constructed from $GaAsP$ semiconducting material. The energy gap of this $LED$ is $1.9\, eV$. Calculate the wavelength of light emitted and its colour.
$[h = 6.63 \times 10^{-34} \, Js$ and $c = 3 \times 10^{8} \, ms^{-1}]$
$[h = 6.63 \times 10^{-34} \, Js$ and $c = 3 \times 10^{8} \, ms^{-1}]$
Identify the devices which work on solar energy.
$(a)$ Photodiode
$(b)$ Photovoltaic cell
$(c)$ $LED$
$(d)$ Photo-thermal devices
$(a)$ Photodiode
$(b)$ Photovoltaic cell
$(c)$ $LED$
$(d)$ Photo-thermal devices
Describe the construction, working, and use of a solar cell.
Medium
View SolutionThe $I-V$ characteristic of an $LED$ is represented by which of the following graphs?
State the band gap of the semiconductor used in the making of $LED$.
Easy
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