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(D) Statement $A$ is wrong because the potential barrier for a silicon $PN$ junction is approximately $0.7 \, V$,and for a germanium $PN$ junction,it

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$A$ is wrong and $B$ is correct.

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(D) Statement $A$ is wrong because the potential barrier for a silicon $PN$ junction is approximately $0.7 \, V$,and for a germanium $PN$ junction,it is approximately $0.3 \, V$. The range $0.1 \, V$ to $0.3 \, V$ is not universally applicable to all $PN$ junctions.Statement $B$ is correct because a Zener diode is specifically designed to operate in the reverse breakdown region to act as a voltage regulator. When forward-biased,it behaves like an ordinary $PN$ junction diode.Therefore,statement $A$ is wrong and statement $B$ is correct.

Consider the following statements $A$ and $B$ and identify the correct choice of the given answers.
Statement $A$: The potential barrier of a $PN$ junction lies between $0.1 \, V$ to $0.3 \, V$ approximately.
Statement $B$: $A$ Zener diode is always connected in reverse bias.

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Consider the following statements $A$ and $B$ and identify the correct choice of the given answers.Statement $A$: The potential barrier of a $PN$ junction lies between $0.1 \, V$ to $0.3 \, V$ approximately.Statement $B$: $A$ Zener diode is always connected in reverse bias.