Find the current $i$ in the circuit.

The depletion layer in the $P-N$ junction region is caused by

For the diode,the characteristic curves are given at different temperatures. The relation between the temperatures is

The current $I$ through the $10\, \Omega$ resistor in the given circuit is.......$mA$.

The following table provides the set of values of $V$ and $I$ obtained for a given diode. Let the characteristics be nearly linear. Over this range,the forward and reverse bias resistance of the given diode respectively are:

Condition	$V$	$I$
Forward biasing	$2.0 \, V$	$60 \, mA$
Forward biasing	$2.4 \, V$	$80 \, mA$
Reverse biasing	$0 \, V$	$0 \, \mu A$
Reverse biasing	$-2 \, V$	$-0.25 \, \mu A$

$D_1$ and $D_2$ are two ideal diodes. Find the values of $i_1$ and $i_2$.