For the forward biased diode characteristics shown in the figure,the dynamic resistance at $I_{D} = 3 \, \text{mA}$ will be $..... \, \Omega$.

Three identical p-n junction diodes $D_1$, $D_2$ and $D_3$ are connected across a battery as shown in the figure. If the widths of the depletion regions of $D_1$, $D_2$ and $D_3$ are $W_1$, $W_2$ and $W_3$, respectively, then the correct option is:

When a $PN$ junction diode is reverse biased,

Which of the following graphs is correct for a $P-N$ junction? (When the $P-N$ junction is forward biased.)

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

In a $p-n$ junction diode,the direction of diffusion current is from