In an NPN transistor,if the doping in the bas | vedclass

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(B) In an $NPN$ transistor,the base is $P$-type. Increasing the doping in the base region increases the number of holes available in the base.This lea

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Decreases

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(B) In an $NPN$ transistor,the base is $P$-type. Increasing the doping in the base region increases the number of holes available in the base.This leads to a higher rate of recombination between the electrons (injected from the emitter) and the holes (in the base).As a result,more electrons are lost in the base region,which increases the base current $(I_B)$.Since the emitter current $(I_E)$ is constant,the increase in base current leads to a decrease in the collector current $(I_C)$,because $I_E = I_B + I_C$.

In an $NPN$ transistor,if the doping in the base region is increased,then the collector current:

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