In a $p-n$ junction solar cell,the value of photo-electromotive force produced by monochromatic light is proportional to the

  • A
    Voltage applied at the $p-n$ junction
  • B
    Barrier voltage at the $p-n$ junction
  • C
    Intensity of light falling on the cell
  • D
    Frequency of light falling on the cell

Explore More

Similar Questions

Assertion: $A$ $P-N$ junction diode is used in reverse bias to detect the intensity of light.
Reason: In reverse bias condition,current is small but it is more sensitive to changes in intensity of incident light.

The given graph represents $V-I$ characteristic for a semiconductor device. Which of the following statements is correct?

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $2480 \; nm$ is incident on it. The band gap in $eV$ for the semiconductor is

$A$ $p-n$ photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly:

Which of the following statements is not correct in the case of light emitting diodes?

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo