In an unbiased p-n junction: | vedclass

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(B) In an unbiased $p-n$ junction,a depletion region is formed at the junction due to the diffusion of charge carriers.This creates a built-in potenti

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Potential at $p$ is less than that at $n$.

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(B) In an unbiased $p-n$ junction,a depletion region is formed at the junction due to the diffusion of charge carriers.This creates a built-in potential barrier.According to the potential-distance graph for a $p-n$ junction,the potential in the $n$-region is higher than the potential in the $p$-region.Therefore,the potential at $p$ is less than that at $n$.

In an unbiased $p-n$ junction:

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