In the circuit,if the forward voltage drop for the diode is $0.5\, V$,the current will be.........$mA$.

In the following circuit shown in the figure,three diodes are connected,each with a forward resistance of $40 \Omega$ and infinite backward resistance. The current through the $100 \Omega$ resistance is: (in $mA$)

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are

$A$ junction diode has a resistance of $25 \Omega$ when forward biased and $2500 \Omega$ when reverse biased. The current in the diode, for the arrangement shown, will be

Assuming in forward bias condition there is a voltage drop of $0.7 \text{ V}$ across a silicon diode, the current through diode $D_1$ in the circuit is . . . . . . $\text{mA}$. (Assume all diodes in the given circuit are identical)

If the forward voltage in a diode is increased,the width of the depletion region $\qquad$ .