In the given figure,each diode has a forward bias resistance of $30\, \Omega$ and infinite resistance in reverse bias. The current ${I}_{1}$ will be $....\,A$.

What is the current through an ideal $PN-$ junction diode shown in the figure below? (in $mA$)

In the following circuit,$PN$-junction diodes $D_1$,$D_2$,and $D_3$ are ideal. For the following potentials of $A$ and $B$,the correct increasing order of equivalent resistance between $A$ and $B$ will be:
$(i) V_A = -10 V, V_B = -5 V$
$(ii) V_A = -5 V, V_B = -10 V$
$(iii) V_A = -4 V, V_B = -12 V$

The $I-V$ characteristic of a $p-n$ junction diode is shown in the figure. Find the approximate dynamic resistance of the $p-n$ junction when a forward bias of $1 \text{ V}$ is applied. (in $\Omega$)

In the given figure,a diode $D$ is connected to an external resistance $R = 100 \,\Omega$ and an $e.m.f.$ of $3.5 \,V$. If the barrier potential developed across the diode is $0.5 \,V$,the current in the circuit will be ........ $mA$.

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :