In the given figure,the potential difference between $A$ and $B$ is :-............. $V$

In a semiconductor $p-n$ diode, the doping concentrations on $p$-side and $n$-side are $10^{15} \text{ atoms/cm}^3$ and $10^{18} \text{ atoms/cm}^3$, respectively. Which one of the following statements is true?

On increasing the reverse bias to a large value in a $P-N$ junction diode,current

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

The reason for current flow in a $P-N$ junction in forward bias is

In a $P-N$ junction,when the current value increases,the contact potential ..........