Pure silicon at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. If the hole concentration increases to $3 \times 10^{22} \ m^{-3}$,then the electron concentration in the silicon is

The electron concentration in an $n$-type semiconductor is the same as the hole concentration in a $p$-type semiconductor. An external electric field is applied across each of them. Compare the currents in them.

The majority charge carriers in $p$-type and $n$-type semiconductors are respectively:

In an intrinsic semiconductor,the energy gap $E_{g}$ is $1.2 \; eV$. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at $600 \; K$ and that at $300 \; K$? Assume that the temperature dependence of intrinsic carrier concentration $n_{i}$ is given by $n_{i} = n_{0} \exp \left(-\frac{E_{g}}{2 k_{B} T}\right)$,where $n_{0}$ is a constant.

In an extrinsic semiconductor,the number densities of holes and electrons are ${N_p}$ and ${N_e}$ respectively. Then:

When an impurity is doped into an intrinsic semiconductor,the conductivity of the semiconductor