$A$ serious drawback of semiconductor devices is:

In a triode valve,which of the following statements is correct?

$A$ triode has a mutual conductance of $2 \times 10^{-3} \text{ mho}$ and an amplification factor of $50$. The anode is connected through a resistance of $25 \times 10^3 \, \Omega$ to a $250 \, \text{V}$ supply. The voltage gain of this amplifier is

When the plate voltage in a diode valve is increased from $100 \, V$ to $150 \, V$, the plate current increases from $7.5 \, mA$ to $12 \, mA$. The dynamic plate resistance will be.... $k \, \Omega$.

The point representing the cut-off grid voltage on the mutual characteristic of a triode is:

The variation of anode current $(I_p)$ in a triode corresponding to a change in grid potential $(V_g)$ at three different values of the plate potential $(V_p)$ is shown in the diagram. The mutual conductance $(g_m)$ of the triode is.........$ m \text{ mho}$.