The $\text{I-V}$ characteristic of a $\text{P-N}$ junction in forward bias is shown. The approximate forward resistance of the junction is $-$ (in $\Omega$)

The circuit shown in the following figure contains two diodes $D_1$ and $D_2$,each with a forward resistance of $50 \, \Omega$ and infinite backward resistance. If the battery voltage is $6 \, V$,the current through the $100 \, \Omega$ resistance (in amperes) is:

Two statements are given below:
$A$. When the forward bias voltage across a $p-n$ junction diode increases above a certain threshold voltage, the diode current increases significantly.
$B$. This current is called reverse saturation current.
Choose the correct answer from the options given below:

If the diodes are ideal in the circuit given below,then the current through the cell is (in $A$)

The reading of the ammeter for a silicon diode in the given circuit is ....... $mA$.

The circuit shown in the figure contains two ideal diodes $D_1$ and $D_2$. If a cell of emf $3 \text{ V}$ and negligible internal resistance is connected as shown,then the current through the $70 \Omega$ resistance (in ampere) is: