The cut-off voltage of the diodes (shown in figure) in forward bias is $0.6 \,V$. The current through the resistor of $40 \,\Omega$ is ........... $mA$.

The barrier potential of a $p-n$ junction depends on:
$(1)$ Type of semiconductor material
$(2)$ Amount of doping
$(3)$ Temperature
Which one of the following is correct?

The circuit has two oppositely connected ideal diodes in parallel. What is the current flowing in the circuit (in $A$)?

On increasing the reverse bias to a large value in a $P-N$ junction diode,current

In a $p-n$ junction diode,the direction of diffusion current is from

$A$ $p-n$ junction diode can withstand up to $20 \, mA$ current under forward bias. The diode has a potential difference of $0.5 \, V$ across it, which is assumed to be independent of current. What is the maximum voltage of the battery used to forward bias the diode when a resistance of $125 \, \Omega$ is connected in series with it (in $V$)?