The depletion layer in a silicon diode is $1 \, \mu m$ wide and the knee potential is $0.6 \, V$. The electric field in the depletion layer is:

The ratio of the resistance of a $P-N$ junction diode in forward bias to its resistance in reverse bias is approximately:

Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. The built-in potential in each diode is $0.7\; V$. For the input voltages shown in the figure,the voltage (in $Volts$) at point $A$ is

In an experiment,the saturation in the plate current in a diode is observed at $240\,V$. But a student still wants to increase the plate current. It can be done,if

$A$ $5 \, V$ battery is connected across the points $X$ and $Y$. Assume $D_{1}$ and $D_{2}$ to be normal silicon diodes. Find the current (in $A$) supplied by the battery if the positive terminal of the battery is connected to point $X$.

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are