The input resistance of a silicon transistor is $100\,\Omega$. Base current is changed by $40\,\mu A$,which results in a change in collector current by $2\,mA$. This transistor is used as a common emitter amplifier with a load resistance of $4\,k\Omega$. The voltage gain of the amplifier is:

An $n-p-n$ transistor power amplifier in $C-E$ configuration gives

In the following transistor amplifier circuit,$\beta = 50$. The $V_{CE}$ of the transistor is .......... $V$.

In a common emitter amplifier,the input signal is applied across

Given below are two statements:
Statement $I:$ In a typical transistor,all three regions emitter,base and collector have same doping level.
Statement $II:$ In a transistor,collector is the thickest and base is the thinnest segment.
In the light of the above statements,choose the most appropriate answer from the options given below.

$A$ transistor has $3$ impurity regions of different doping levels. In the order of increasing doping level,the regions are