The relation between $\alpha$ and $\beta$ parameters of current gains for a transistor is given by:

$A$ common emitter amplifier circuit,built using an $npn$ transistor,is shown in the figure. Its $dc$ current gain is $250$,$R_C = 1\,k\Omega$ and $V_{CC} = 10\,V$. What is the minimum base current for $V_{CE}$ to reach saturation? (in $\mu A$)

What is the power gain in a $CE$ amplifier,where input resistance is $3 \, k\Omega$ and load resistance is $24 \, k\Omega$,given $\beta = 6$?

Which two of the following statements are true for a transistor?
$(1)$ The base,emitter,and collector regions of a transistor have the same size and doping concentration.
$(2)$ The base region is thin and lightly doped.
$(3)$ The emitter-base junction is forward-biased,and the base-collector junction is reverse-biased.
$(4)$ Both the emitter-base junction and the base-collector junction are forward-biased.

In a common emitter transistor circuit,the base current is $40 \ \mu A$. Find the value of $V_{BE}$. (in $V$)

The phase difference between the input voltage and the output voltage in a common emitter amplifier is (in $^{\circ}$)