The value of net resistance of the network as shown in the given figure is:

The barrier potential of a $p-n$ junction depends on:
$(1)$ Type of semiconductor material
$(2)$ Amount of doping
$(3)$ Temperature
Which one of the following is correct?

If in a $p-n$ junction diode,a square input signal of $10\, V$ (varying from $+5\, V$ to $-5\, V$) is applied as shown,then the output signal across $R_L$ will be:

In which of the following figures is the diode reverse biased?

$A$ wafer of pure germanium crystal has two parts $X$ and $Y$. The end $X$ is obtained by doping with arsenic and $Y$ with indium. It is connected to a battery as shown in the figure. Which of the following statements is correct?

Which of the following statements concerning the depletion zone of an unbiased $PN$ junction is (are) true?
$(A)$ The width of the zone is independent of the densities of the dopants (impurities).
$(B)$ The width of the zone is dependent on the densities of the dopants.
$(C)$ The electric field in the zone is produced by the ionized dopant atoms.
$(D)$ The electric field in the zone is provided by the electrons in the conduction band and the holes in the valence band.