When $n-p-n$ transistor is used as an amplifier :

Which two of the following statements are true for a transistor?
$(1)$ The base,emitter,and collector regions of a transistor have the same size and doping concentration.
$(2)$ The base region is thin and lightly doped.
$(3)$ The emitter-base junction is forward-biased,and the base-collector junction is reverse-biased.
$(4)$ Both the emitter-base junction and the base-collector junction are forward-biased.

Assertion : In a common emitter transistor amplifier,the input current is much less than the output current.
Reason : The common emitter transistor amplifier has very high input impedance.

In a common emitter configuration with suitable bias,it is given that $R_L$ is the load resistance and $R_{BE}$ is the small signal dynamic resistance (input side). Then,the voltage gain,current gain,and power gain are given,respectively,by: [$\beta$ is the current gain,$I_B$,$I_C$,$I_E$ are respectively base,collector,and emitter currents]

An $N-P-N$ transistor conducts when:

Three terminals of a transistor,denoted by $P, Q,$ and $R,$ are tested using a multimeter. No conduction occurs between $P$ and $Q.$ When the negative lead of the multimeter is connected to $R$ and the positive lead is connected to either $P$ or $Q,$ the meter shows some resistance. Which of the following options is correct for the given transistor?