Which of the following regions of transistors are,respectively,heavily doped and lightly doped?

What is the power gain in a $CE$ amplifier,where the input resistance is $3\,k\Omega$ and the load resistance is $24\,k\Omega$,given $\beta = 20$?

In the given transistor circuit,the base current is $35 \ \mu A$. If the value of $V_{BE}$ is negligible,what is the value of $R_b$ in $k\Omega$?

In the following common emitter configuration, an $NPN$ transistor with current gain $\beta = 100$ is used. The output voltage of the amplifier will be

$A$ working transistor with its three legs marked $P, Q$ and $R$ is tested using a multimeter. No conduction is found between $P$ and $Q$. By connecting the common (negative) terminal of the multimeter to $R$ and the other (positive) terminal to $P$ or $Q$,some resistance is seen on the multimeter. Which of the following is true for the transistor?

An $N-P-N$ transistor in a common emitter mode is used as a simple voltage amplifier with a collector current of $4 \ mA$. The terminal of an $8 \ V$ battery is connected to the collector through a load resistance $R_L$ and to the base through a resistance $R_B$. The collector-emitter voltage $V_{CE} = 4 \ V$,base-emitter voltage $V_{BE} = 0.6 \ V$ and base current amplification factor $\beta_{d.c.} = 100$. Calculate the values of $R_L$ and $R_B$.