Which of the following statements is not true?
- AThe resistance of intrinsic semiconductors decreases with an increase in temperature.
- BDoping pure $Si$ with trivalent impurities gives $P-$type semiconductors.
- CThe majority carriers in $N-$type semiconductors are holes.
- D$A$ $PN-$junction can act as a semiconductor diode.
Explore More
Similar Questions
Pure $Si$ at $500\,K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\,m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\,m^{-3}$. The doped semiconductor is of
Difficult
View Solution$A$ $P$-type semiconductor is:
Easy
View SolutionThe Bohr radius of the fifth electron of phosphorus (atomic number $Z = 15$) acting as a dopant in silicon (relative dielectric constant $\varepsilon_r = 12$) is ....... $\mathring{A}$.
Medium
View SolutionWhen a small amount of antimony impurity is added to a germanium crystal,what happens?
Easy
View SolutionWhich of the following statements is incorrect?
Medium
View SolutionVedclass Products
For Students
Vedclass Test Series
Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.
Start Free TrialFor Teachers
Exam Paper Generator
Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.
Try FreeFor Institutes
Online Exam Module
Live online exams with unlimited students, 360° analytics & white-label branding.
See Demo