Write four points in distinguishing between $p$-type semiconductor and $n$-type semiconductor.

The width of the forbidden gap in a silicon crystal is $1.1 \, eV$. When the crystal is converted into an $N$-type semiconductor,the distance of the Fermi level from the conduction band is:

Electric conduction in a semiconductor takes place due to

Which statement is correct regarding the charge of doped semiconductors?

$A$ crystal of intrinsic silicon at room temperature has a carrier concentration of $1.6 \times 10^{16} / m^3$. If the donor concentration level is $4.8 \times 10^{20} / m^3$, then the concentration of holes in the semiconductor is

To obtain electrons as majority charge carriers in a semiconductor,the impurity mixed is