$A$ positive hole in a semiconductor is

  • A
    an anti-particle of electron
  • B
    a vacancy created when an electron leaves a covalent bond
  • C
    absence of free electrons
  • D
    an artificially created particle

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The mobility of free electrons is greater than that of free holes because

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If the number of holes and electrons are represented by $n_h$ and $n_e$ respectively,then which of the following is correct for an intrinsic semiconductor?

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