The mobility of free electrons is greater than that of free holes because

When the conductivity of a semiconductor is only due to the breaking of the covalent bonds,the semiconductor is called

Suppose an $n$-type wafer is created by doping $Si$ crystal having $5 \times 10^{28} \text{ atoms/m}^3$ with $1 \text{ ppm}$ concentration of $As$. On the surface,$200 \text{ ppm}$ Boron is added to create a $p$-region in this wafer. Considering $n_i = 1.5 \times 10^{16} \text{ m}^{-3}$,$(i)$ Calculate the densities of the charge carriers in the $n$ and $p$ regions. $(ii)$ Comment on which charge carriers would contribute largely to the reverse saturation current when the diode is reverse biased.

In an $n$-type silicon,which of the following statements is true?

Holes are charge carriers in

The process of adding impurities to a pure semiconductor is called