In an $n$-type silicon,which of the following statements is true?
- AElectrons are majority carriers and trivalent atoms are the dopants.
- BElectrons are minority carriers and pentavalent atoms are the dopants.
- CHoles are majority carriers and trivalent atoms are the dopants.
- DHoles are minority carriers and pentavalent atoms are the dopants.
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Which of the following when added as an impurity into silicon produces $n-$type semiconductor?
The valence of an impurity added to germanium crystal in order to convert it into a $P-$type semiconductor is
Easy
View SolutionWhat will be the conductivity of a pure silicon crystal at $300 \ K$ temperature,if the electron-hole pairs per $cm^3$ is $1.072 \times 10^{10}$ at this temperature,$\mu_e = 1350 \ cm^2/V \cdot s$ and $\mu_h = 480 \ cm^2/V \cdot s$?
Medium
View Solution$A$ pure silicon crystal at temperature $300 \text{ K}$ has electron and hole concentration $(n_i) = 10^{16} \text{ per m}^3$ each. If $10^{21}$ phosphorus atoms $(n_D)$ are added per cubic metre, what is the new hole concentration in the silicon crystal?
DifficultMHT CET 2026
View SolutionSuppose a pure $Si$ crystal has $5 \times 10^{28}$ atoms $m^{-3}$. It is doped by $1$ ppm concentration of pentavalent $As$. Calculate the number of holes. Given that $n_i = 1.5 \times 10^{16} m^{-3}$.
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