In a $P$-type semiconductor,the acceptor energy levels $E_A$ are located:

The electron mobility in $N$-type germanium is $3900 \ cm^2/V \cdot s$ and its conductivity is $6.24 \ mho/cm$. If the effect of holes is negligible,what is the impurity concentration?

An $n$-type and a $p$-type silicon semiconductor can be obtained by doping pure silicon with

$A$ potential difference of $2.5 \,V$ is applied across the faces of a germanium crystal plate. The face area of the crystal is $1 \,cm^2$ and its thickness is $1.0 \,mm$. The free electron concentration in germanium is $2 \times 10^{19} \,m^{-3}$ and the electron and hole mobilities are $0.33 \,m^2/V \cdot s$ and $0.17 \,m^2/V \cdot s$ respectively. The current across the plate will be .......... $A$.

$P$-type semiconductors are made by adding which impurity element?

Which type of impurity is to be added to a pure semiconductor to get a $p$-type semiconductor?