When a P-N junction is in reverse bias,the cu | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(C) In a $P-N$ junction,when it is reverse biased,the potential barrier at the junction increases.This prevents the majority charge carriers (holes in

Vedclass · Accepted Answer

Drift of charge carriers

Vedclass · Answer

(C) In a $P-N$ junction,when it is reverse biased,the potential barrier at the junction increases.This prevents the majority charge carriers (holes in $P$-region and electrons in $N$-region) from crossing the junction,effectively stopping the diffusion current.However,the minority charge carriers (electrons in $P$-region and holes in $N$-region) are pushed across the junction by the electric field created by the reverse bias voltage.This movement of minority charge carriers is known as drift current.Therefore,the small reverse saturation current is primarily due to the drift of minority charge carriers.

When a $P-N$ junction is in reverse bias,the current flowing through the junction is primarily due to:

Similar Questions

$A$ wafer of pure germanium crystal has two parts $X$ and $Y$. The end $X$ is obtained by doping with arsenic and $Y$ with indium. It is connected to a battery as shown in the figure. Which of the following statements is correct?

In the given figure,which of the diodes are forward biased?

What is the cause of the formation of the depletion layer in a $P-N$ junction?

Which of the diode circuits shows the correct biasing used for the measurement of the dynamic resistance of a $p$-$n$ junction diode?

Among the diodes shown in the following diagrams,which one is reverse biased?

Vedclass Test Series

Exam Paper Generator

Online Exam Module