$A$ semiconductor is placed in an electric field. Let the number density of charge carriers be $n$ and the average drift velocity be $v$. If the temperature is increased,then:

  • A
    $n$ and $v$ both will increase.
  • B
    $n$ will increase but $v$ will decrease.
  • C
    $v$ will increase but $n$ will decrease.
  • D
    $n$ and $v$ both will decrease.

Explore More

Similar Questions

$N-$ type semiconductors are obtained when germanium is doped with:

In pure $Si$ at $300 \ K$,the concentration of electrons $(n_e)$ and holes $(n_h)$ is equal and is $1.5 \times 10^{16} \ m^{-3}$. If the concentration of holes $(n_h)$ increases to $3 \times 10^{22} \ m^{-3}$ after doping with Indium,calculate the concentration of electrons $(n_e)$ in the doped $Si$.

In a $P-$type semiconductor,germanium is doped with

Why is it required to add impurity to a pure semiconductor? Mention its condition and explain what impure semiconductors are.

In a semiconductor,the concentrations of electrons and holes are $8 \times 10^{18} \, m^{-3}$ and $5 \times 10^{18} \, m^{-3}$ respectively. If the mobilities of electrons and holes are $2.3 \, m^2/V \cdot s$ and $0.01 \, m^2/V \cdot s$ respectively,then the semiconductor is:

Difficult
View Solution

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo