The bandgap of the material of a photodiode is $2.0 \ eV$. What is the minimum frequency of radiation that this material can absorb?

The active area of a solar cell is $......$ so that the power obtained $......$.

$A$ photodetector is made from a semiconductor $In_{0.53}Ga_{0.47}As$ with $E_g = 0.73 \, eV$. What is the maximum wavelength,which it can detect in $nm$?

The photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly

$A$ family uses $8 \; kW$ of power.
$(a)$ Direct solar energy is incident on the horizontal surface at an average rate of $200 \; W$ per square meter. If $20 \%$ of this energy can be converted to useful electrical energy, how large an area is needed to supply $8 \; kW$?
$(b)$ Compare this area to that of the roof of a typical house.

In optical fiber communication, an $APD$ semiconductor is used for: