$P-$type semiconductor is formed when:

Which type of impurity is to be added to a pure semiconductor to get a $p$-type semiconductor?

The electron concentration in an $n$-type semiconductor is the same as the hole concentration in a $p$-type semiconductor. An external electric field is applied across each of them. Compare the currents in them.

The resistivity of a pure semiconductor is $0.5 \ \Omega m$. If the electron and hole mobility are $0.39 \ m^2 / V-s$ and $0.19 \ m^2 / V-s$ respectively,then calculate the intrinsic carrier concentration.

If a semiconductor has an intrinsic carrier concentration of $1.41 \times 10^{16} \, m^{-3}$,when doped with $10^{21} \, m^{-3}$ phosphorus,then the concentration of holes at room temperature will be

In the energy band diagram of a material shown below,the open circles and filled circles denote holes and electrons respectively. The material is a/an