(A) For a silicon diode,the knee voltage or barrier potential is approximately $0.7\, V$.The bulk resistance $(r_f)$ is calculated using the excess vo

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(A) For a silicon diode,the knee voltage or barrier potential is approximately $0.7\, V$.The bulk resistance $(r_f)$ is calculated using the excess voltage across the diode:$r_f = \frac{V_f - V_k}{I_f} = \frac{1.2\, V - 0.7\, V}{100 \times 10^{-3}\, A} = \frac{0.5\, V}{0.1\, A} = 5\,\Omega$.The reverse resistance $(r_r)$ is calculated using Ohm's law for the reverse bias condition:$r_r = \frac{V_r}{I_r} = \frac{10\, V}{1 \times 10^{-6}\, A} = 10 \times 10^6\, \Omega = 10\, M\Omega$.Thus,the bulk resistance is $5\,\Omega$ and the reverse resistance is $10\, M\Omega$.

Class 12 Physics Semiconductor Electronics PN Junction and Diode

Medium

$A$ silicon diode has a forward voltage drop of $1.2\, V$ for a forward $DC$ current of $100\, mA$. It has a reverse current of $1\times10^{-6}\, A$ for a reverse voltage of $10\, V$. The bulk and reverse resistances of the diode are:

A
$5\,\Omega, 10\, M\Omega$
B
$6\,\Omega, 6\, M\Omega$
C
$7\,\Omega, 70\, M\Omega$
D
$5\,\Omega, 1\, M\Omega$

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Semiconductor Electronics

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PN Junction and Diode

Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given by $I = I_0 \left( e^{\frac{V}{2 V_T}} - 1 \right)$, where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction, then $r_d(1000 I_0) = \alpha r_d(10 I_0)$, where $\alpha$ is approximately equal to

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$A$ diode having a potential difference of $0.5\, V$ across its junction,which does not depend on the current,is connected in series with a resistance of $20\, \Omega$ across a source. If $0.1\, A$ passes through the resistance,then what is the voltage of the source (in $, V$)?

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In the given figure,which of the diodes are forward biased?

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In the following circuit,$PN$-junction diodes $D_1, D_2$,and $D_3$ are ideal. For the following potentials of $A$ and $B$,the correct increasing order of resistance between $A$ and $B$ will be:
$(i) V_A = -10\,V, V_B = -5\,V$
$(ii) V_A = -4\,V, V_B = -12\,V$

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$A$ diode operates at a constant potential drop of $0.5\, V$ for all currents and has a maximum power rating of $100\, mW$. If the source voltage is $1.5\, V$,what resistance must be connected in series with the diode so that the current in the circuit is at its maximum safe value? (in $\Omega$)

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$A$ silicon diode has a forward voltage drop of $1.2\, V$ for a forward $DC$ current of $100\, mA$. It has a reverse current of $1\times10^{-6}\, A$ for a reverse voltage of $10\, V$. The bulk and reverse resistances of the diode are:

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$A$ diode having a potential difference of $0.5\, V$ across its junction,which does not depend on the current,is connected in series with a resistance of $20\, \Omega$ across a source. If $0.1\, A$ passes through the resistance,then what is the voltage of the source (in $, V$)?

In the given figure,which of the diodes are forward biased?

In the following circuit,$PN$-junction diodes $D_1, D_2$,and $D_3$ are ideal. For the following potentials of $A$ and $B$,the correct increasing order of resistance between $A$ and $B$ will be:$(i) V_A = -10\,V, V_B = -5\,V$$(ii) V_A = -4\,V, V_B = -12\,V$

$A$ diode operates at a constant potential drop of $0.5\, V$ for all currents and has a maximum power rating of $100\, mW$. If the source voltage is $1.5\, V$,what resistance must be connected in series with the diode so that the current in the circuit is at its maximum safe value? (in $\Omega$)

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In the following circuit,$PN$-junction diodes $D_1, D_2$,and $D_3$ are ideal. For the following potentials of $A$ and $B$,the correct increasing order of resistance between $A$ and $B$ will be:
$(i) V_A = -10\,V, V_B = -5\,V$
$(ii) V_A = -4\,V, V_B = -12\,V$