In the following circuit,$PN$-junction diodes $D_1, D_2$,and $D_3$ are ideal. For the following potentials of $A$ and $B$,the correct increasing order of resistance between $A$ and $B$ will be:
$(i) V_A = -10\,V, V_B = -5\,V$
$(ii) V_A = -4\,V, V_B = -12\,V$

Which of the following statements concerning the depletion zone of an unbiased $PN$ junction is (are) true?
$(A)$ The width of the zone is independent of the densities of the dopants (impurities).
$(B)$ The width of the zone is dependent on the densities of the dopants.
$(C)$ The electric field in the zone is produced by the ionized dopant atoms.
$(D)$ The electric field in the zone is provided by the electrons in the conduction band and the holes in the valence band.

Assume that each diode as shown in the figure has a forward bias resistance of $50 \Omega$ and an infinite reverse bias resistance. The current through the $150 \Omega$ resistance is

In the middle of the depletion layer of a reverse-biased $PN$ junction,the

Two ideal diodes are connected in the network as shown in the figure. The equivalent resistance between $A$ and $B$ is $.......\Omega$.

When a forward bias is applied to a $p-n$ junction,it