Assume that each diode as shown in the figure has a forward bias resistance of $50 \Omega$ and an infinite reverse bias resistance. The current through the $150 \Omega$ resistance is

In forward biasing of the $p-n$ junction:

Assertion: The value of current through the $p-n$ junction in the given figure will be $10\, mA$.
Reason: In the above figure,the $p-$side is at a higher potential than the $n-$side.

In the following circuit,$PN$-junction diodes $D_1, D_2$,and $D_3$ are ideal. For the following potentials of $A$ and $B$,the correct increasing order of resistance between $A$ and $B$ will be:
$(i) V_A = -10\,V, V_B = -5\,V$
$(ii) V_A = -4\,V, V_B = -12\,V$

The current-voltage relation of a diode is given by $I = \left( {{e^{\frac{{1000V}}{T}}} - 1} \right) \, mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \, V$ while measuring the voltage to obtain a current of $5 \, mA$ at $300 \, K$,then the error in the value of the current in $mA$ is.....$mA$

The $I-V$ characteristics of a $p-n$ junction diode in forward bias is shown in the figure. The ratio of dynamic resistance,corresponding to forward bias voltages of $2 \; V$ and $4 \; V$ respectively,is