As per the given circuit,the value of current through the battery will be $\dots \; A$.

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

In the following circuits,which one of the diodes is reverse biased?

If a $p-n$ junction diode is in forward bias,then:

In the following circuit,find $I_1$ and $I_2$.

Which of the diode circuits shows the correct biasing used for the measurement of the dynamic resistance of a $p$-$n$ junction diode?