Avalanche breakdown in a PN junction diode is | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(D) Avalanche breakdown in a $PN$ junction occurs due to the cumulative effect of impact ionization. When a high reverse bias voltage is applied,the m

Vedclass · Accepted Answer

Cumulative effect of increased electron collision and creation of added electron-hole pairs

Vedclass · Answer

(D) Avalanche breakdown in a $PN$ junction occurs due to the cumulative effect of impact ionization. When a high reverse bias voltage is applied,the minority charge carriers gain sufficient kinetic energy from the electric field. These high-energy carriers collide with valence electrons,knocking them out of their bonds and creating new electron-hole pairs. These newly created carriers are then accelerated by the electric field,leading to further collisions and a rapid,cumulative increase in the number of charge carriers,resulting in a large current.

Avalanche breakdown in a $PN$ junction diode is due to

Similar Questions

What is forward bias and reverse bias?

The approximate ratio of resistances in the forward and reverse bias of the $PN$-junction diode is

The built-in potential of a $p-n$ junction diode is $0.7 \,V$. If the diode is forward biased and the applied voltage is $0.3 \,V$, the effective barrier height is (in $\,V$)

The curve between charge density and distance near a $P-N$ junction will be:

In the diodes shown in the diagrams,which one is reverse biased?

Vedclass Test Series

Exam Paper Generator

Online Exam Module