The built-in potential of a p-n junction diod | vedclass

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(C) The built-in potential (barrier potential) of a $p-n$ junction diode is denoted by $V_B = 0.7 \,V$.When a $p-n$ junction diode is forward biased w

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$0.4$

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(C) The built-in potential (barrier potential) of a $p-n$ junction diode is denoted by $V_B = 0.7 \,V$.When a $p-n$ junction diode is forward biased with an external voltage $V_f$, the effective barrier height (or effective potential barrier) decreases.The formula for the effective barrier height $V_{eff}$ is given by $V_{eff} = V_B - V_f$.Given $V_B = 0.7 \,V$ and $V_f = 0.3 \,V$.Substituting the values, we get $V_{eff} = 0.7 \,V - 0.3 \,V = 0.4 \,V$.Therefore, the effective barrier height is $0.4 \,V$.

The built-in potential of a $p-n$ junction diode is $0.7 \,V$. If the diode is forward biased and the applied voltage is $0.3 \,V$, the effective barrier height is (in $\,V$)

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