Determine $V_{CE}$ in the following silicon-based transistor circuit. (in $V$)

The depletion region of a $p-n$ junction:

If the voltage across the diode in the given circuit is $0.5 \ V$,then the current flowing through the circuit is ...... $mA$.

Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given by $I = I_0 \left( e^{\frac{V}{2 V_T}} - 1 \right)$, where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction, then $r_d(1000 I_0) = \alpha r_d(10 I_0)$, where $\alpha$ is approximately equal to

If a diode having infinite reverse bias resistance is connected in a circuit as shown in the figure,then $I_1$ and $I_2$ are respectively:

$A$ $PN-$ junction has a thickness of the order of