The depletion region of a p-n junction: | vedclass

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Question

(A) In a $p-n$ junction, the depletion region is formed by the diffusion of charge carriers across the junction.When the junction is forward biased, t

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increases if reverse biased.

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(A) In a $p-n$ junction, the depletion region is formed by the diffusion of charge carriers across the junction.When the junction is forward biased, the external electric field opposes the internal electric field, which pushes the charge carriers towards the junction, thereby decreasing the width of the depletion region.When the junction is reverse biased, the external electric field supports the internal electric field, which pulls the charge carriers away from the junction, thereby increasing the width of the depletion region.Therefore, the depletion region increases if the junction is reverse biased.

The depletion region of a $p-n$ junction:

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