(C) In an $n-p-n$ transistor, the emitter is heavily doped to provide a large number of charge carriers. The base is very thin and lightly doped to al

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Collector is lightly doped and large in size

(C) In an $n-p-n$ transistor, the emitter is heavily doped to provide a large number of charge carriers. The base is very thin and lightly doped to allow most of the charge carriers from the emitter to pass through to the collector. The collector is moderately doped and is the largest in size to dissipate the heat generated during operation. Therefore, the statement that the collector is lightly doped is incorrect.

Class 12 Physics Semiconductor Electronics Junction Transistor

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For an $n-p-n$ transistor structure, which of the following statements is $NOT$ true?

TS EAMCET 2022 All TS EAMCET

A
Emitter is heavily doped and moderate in size
B
Base is lightly doped and thin in size
C
Collector is lightly doped and large in size
D
Collector is moderately doped and large in size

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MediumAP EAMCET 2021

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$A$ transistor is connected in common emitter configuration. The collector supply is $8 V$ and the voltage drop across a resistor of $800 \Omega$ in the collector circuit is $0.5 V$. If the current gain factor $\alpha$ is $0.96$,the base current is

MediumAP EAMCET 2021

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In a transistor,the forward bias is always kept smaller than the reverse bias. The correct reason is:

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For an $n-p-n$ transistor structure, which of the following statements is $NOT$ true?

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$A$ transistor having $\alpha = 0.99$ is used in a common base amplifier. If the load resistance is $4.5 \, k\Omega$ and the dynamic resistance of the emitter junction is $50 \, \Omega$,the voltage gain of the amplifier will be:

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