If $n_{e}$ and $n_{h}$ are concentrations of electrons and holes in a semiconductor,then the intrinsic carrier concentration $(n_i)$ in thermal equilibrium is

  • A
    $n_i=\sqrt{\frac{n_e}{n_h}}$
  • B
    $n_i=\frac{n_h}{n_e}$
  • C
    $n_i=\sqrt{n_e n_h}$
  • D
    $n_i=n_e+n_h$

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