If the $p-n$ junction diode is unbiased,
- A$n$-type side has lower potential than $p$-type side.
- B$n$-type side has same potential as $p$-type side.
- CAn electric field is established at the junction such that $n$-side is at positive voltage relative to $p$-side.
- DThe potential across the junction is such that $p$-side is at positive voltage relative to $n$-side.
Explore More
Similar Questions
Write a short note on a semiconductor diode.
Medium
View Solution$A$ $p-n$ junction diode is reverse biased with a voltage of $8 \, V$. If the resistance of the diode is $4 \times 10^7 \, \Omega$, then the reverse saturation current is: (in $ \, \mu A$)
For the forward biased diode characteristics shown in the figure,the dynamic resistance at $I_{D} = 3 \, \text{mA}$ will be $..... \, \Omega$.
If a $p-n$ junction diode is in forward bias,then:
For the diagram shown,the resistance between points $A$ and $B$ when the ideal diode '$D$' is forward biased is '$R_1$' and that when reverse biased is '$R_2$'. The ratio $\frac{R_1}{R_2}$ is
Vedclass Products
For Students
Vedclass Test Series
Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.
Start Free TrialFor Teachers
Exam Paper Generator
Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.
Try FreeFor Institutes
Online Exam Module
Live online exams with unlimited students, 360° analytics & white-label branding.
See Demo