In n-p-n transistor, in CE configuration: | vedclass

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(C) $1$. The emitter is heavily doped compared to the collector to provide a large number of charge carriers. This statement is correct.$2$. Emitter a

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$1$ and $4$ are correct

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(C) $1$. The emitter is heavily doped compared to the collector to provide a large number of charge carriers. This statement is correct.$2$. Emitter and collector cannot be interchanged because they have different doping levels and physical dimensions. This statement is incorrect.$3$. The base region is very thin and lightly doped to allow most charge carriers from the emitter to pass through to the collector. This statement is incorrect.$4$. In an $n-p-n$ transistor, the conventional current flows from the collector to the base and from the base to the emitter (or simply, the emitter current $I_E$ flows out of the emitter). The conventional current direction is from base to emitter in the $n-p-n$ transistor structure. This statement is correct.Therefore, statements $1$ and $4$ are correct.

In $n-p-n$ transistor, in $CE$ configuration:

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