In a P-N junction diode,if the P region is mo | vedclass

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(B) The width of the depletion layer is inversely proportional to the doping concentration of the semiconductor region.Mathematically,the width of the

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Greater in the $n$ region

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(B) The width of the depletion layer is inversely proportional to the doping concentration of the semiconductor region.Mathematically,the width of the depletion layer in the $P$ region $(w_p)$ and the $n$ region $(w_n)$ is related to the doping concentrations $N_A$ and $N_D$ as $w_p N_A = w_n N_D$.Since the $P$ region is more heavily doped $(N_A > N_D)$,the width of the depletion layer in the $P$ region will be smaller $(w_p Therefore,the depletion layer extends more into the $n$ region,which has a lower doping concentration.

In a $P-N$ junction diode,if the $P$ region is more heavily doped than the $n$ region,then the depletion layer is:

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